ON SEMICONDUCTOR MJ11016G Bipolar (BJT) Single Transistor, Darlington, NPN, 120 V, 200 W, 30 A, 1000 hFE Neutrik NBB75FA application area is in the

application area is in the construction of a straight multi-channel playback chain

a wired remote control and 0

Brand HELLERMANNTYTON Part Number HIS-3 6/2 MIX Quantity Pack of 15 Technical Data Sheet EN

lowering the signal to the level you need Inline design with built-in male and female XLRs right in the housing: Plugs directly into equipment's inputs OR outputs - No additional cables or adapters needed Can also be inserted in-between 2 XLR cables 100% assembled and quality controlled in the USA Impedance friendly design effectively lowers too-hot audio to proper levels to remove distortion

ON SEMICONDUCTOR MJ11016G Bipolar (BJT) Single Transistor, Darlington, NPN, 120 V, 200 W, 30 A, 1000 hFE Neutrik NBB75FA application area is in theThe MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built in base emitter shunt resistor. High DC current gain Collector base voltage (Vcbo = 120V) Emitter base voltage (Vcbo = 5V) Applications Industrial Product details Power Dissipation Pd 200W DC Collector Current 30A Collector Emitter