VISHAY SIS407DN-T1-GE3 MOSFET Transistor, P Channel, -25 A, -20 V, 0.0082 ohm, -4.5 V, -400 mV General Brand 36-46 3" Depth 4

3" Depth 4

impedance 20k/1k ohm (line/mic)

UPC: 720171930837

Balanced lines offer increased immunity to external electrical noise

VISHAY SIS407DN-T1-GE3 MOSFET Transistor, P Channel, -25 A, -20 V, 0.0082 ohm, -4.5 V, -400 mV General Brand 36-46 3" Depth 4This is a MOSFET Transistor, P Channel, 25 A, 20 V, 0. 0082 ohm, 4. 5 V, 400 mV product from VISHAY with the model number SIS407DN T1 GE3Product details Power Dissipation Pd 33W Operating Temperature Max 150C Continuous Drain Current Id 25A Transistor Polarity P Channel No. of Pins 8Pins Threshold Voltage Vgs 400mV Product Range Automotive Qualification Standard Drain Source Voltage Vds 20V Rds(on) Test Voltage Vgs 4. 5V Transistor Case Style PowerPAK