STMICROELECTRONICS MJD117T4 Bipolar (BJT) Single Transistor, PNP, -100 V, 20 W, -2 A, 200 hFE Diffusors 1 mV maximum Voltage Breakdown

1 mV maximum Voltage Breakdown Must withstand at 500 VDC /15 sec Flex Life 16

Designed for 24-hour operation the Tamron 12VM412ASIR uses infrared corrected lens elements to produce brighter images in lighting conditions ranging from ambient to totally dark locations and is compatible with both Day/Night and conventional B/W cameras

The forest green camo Lens Cover for the Nikon 18-200mm f/3

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STMICROELECTRONICS MJD117T4 Bipolar (BJT) Single Transistor, PNP, -100 V, 20 W, -2 A, 200 hFE Diffusors 1 mV maximum Voltage BreakdownThis is a Bipolar (BJT) Single Transistor, PNP, 100 V, 20 W, 2 A, 200 hFE product from STMICROELECTRONICS with the model number MJD117T4Product details Transistor Polarity PNP Collector Emitter Voltage V(br)ceo 100V Transition Frequency ft Power Dissipation Pd 20W DC Collector Current 2A DC Current Gain hFE 200hFE Transistor Case Style TO 252 No. of Pins 3Pins Operating Temperature Max 150C Product Range Automotive Qualification Standard MSL MSL 1