STMICROELECTRONICS TIP120 Bipolar (BJT) Single Transistor, Darlington, NPN, 60 V, 65 W, 5 A, 1000 hFE Belkin F9D1000-15 Material of Construction Black rubber

Material of Construction Black rubber Dimensions (L x W) 0

Sony A-Mount Lens/Full-Frame Format

0 Ports 3 Number of Network (RJ-45) Ports 1 Physical Characteristics Color Black Form Factor External Height 0

Holding Current 1

STMICROELECTRONICS TIP120 Bipolar (BJT) Single Transistor, Darlington, NPN, 60 V, 65 W, 5 A, 1000 hFE Belkin F9D1000-15 Material of Construction Black rubberThe TIP120 from STMicroelectronics is a through hole complementary power darlington transistor in TO 220 package. This device manufactured in planar technology with "base island" layout and monolithic darlington configuration resulting in exceptional high gain performance coupled with very low saturation voltage. Collector to emitter voltage (Vce) is 60V Collector current (Ic) is 5A Power dissipation (Pd) is 65W Collector to emitter saturation voltage