INFINEON IRF1310NPBF MOSFET Transistor, N Channel, 41 A, 100 V, 36 mohm, 10 V, 4 V Bolt VDE Zero Power Resistance at

VDE Zero Power Resistance at 25°C 5ohm Product Range B57364S0 Series Disc Size 21mm Maximum Energy Rating at 25°C - Maximum Steady State Current at 25°C 8

and low rotor inertia

Large center focusing wheel

4 mm) Outer Shield Material Tinned copper braid Coverage 95% Outer Jacket Material: PVC

INFINEON IRF1310NPBF MOSFET Transistor, N Channel, 41 A, 100 V, 36 mohm, 10 V, 4 V Bolt VDE Zero Power Resistance atThe IRF1310NPBF is a 100V single N channel HEXFET Power MOSFET with extremely low on resistance per silicon area and fast switching performance using advanced planar technology. 175C Operating temperature Dynamic dV dt rating Fully avalanche rated Applications Power Management Product details Power Dissipation Pd 170W Operating Temperature Max 175C Continuous Drain Current Id 41A Transistor Polarity N Channel No. of Pins 3Pins Threshold Voltage Vgs 4V